发明名称 |
METHOD FOR CLEANING MAGNETIC FILM PROCESSING CHAMBER, METHOD FOR MANUFACTURING MAGNETIC ELEMENT, AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
<p>Disclosed is a method for producing a multilayer film, wherein the time for a cleaning process can be reduced. Also disclosed are a method for manufacturing a magnetoresistive effect element, and a substrate processing apparatus. According to an embodiment of the present invention, the inside of an etching apparatus is cleaned with plasma of a mixed gas containing an H2 gas and an O2 gas during an interval between processes. Consequently, the cleaning time is reduced and the productivity is improved.</p> |
申请公布号 |
WO2010084909(A1) |
申请公布日期 |
2010.07.29 |
申请号 |
WO2010JP50704 |
申请日期 |
2010.01.21 |
申请人 |
CANON ANELVA CORPORATION;OSADA TOMOAKI;ERNULT FRANCK |
发明人 |
OSADA TOMOAKI;ERNULT FRANCK |
分类号 |
H01L43/12;G11B5/39;H01L21/3065;H01L43/08 |
主分类号 |
H01L43/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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