发明名称 METHOD FOR CLEANING MAGNETIC FILM PROCESSING CHAMBER, METHOD FOR MANUFACTURING MAGNETIC ELEMENT, AND SUBSTRATE PROCESSING APPARATUS
摘要 <p>Disclosed is a method for producing a multilayer film, wherein the time for a cleaning process can be reduced. Also disclosed are a method for manufacturing a magnetoresistive effect element, and a substrate processing apparatus. According to an embodiment of the present invention, the inside of an etching apparatus is cleaned with plasma of a mixed gas containing an H2 gas and an O2 gas during an interval between processes. Consequently, the cleaning time is reduced and the productivity is improved.</p>
申请公布号 WO2010084909(A1) 申请公布日期 2010.07.29
申请号 WO2010JP50704 申请日期 2010.01.21
申请人 CANON ANELVA CORPORATION;OSADA TOMOAKI;ERNULT FRANCK 发明人 OSADA TOMOAKI;ERNULT FRANCK
分类号 H01L43/12;G11B5/39;H01L21/3065;H01L43/08 主分类号 H01L43/12
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