INTEGRATED CIRCUIT SYSTEM EMPLOYING STRAINED TECHNOLOGY

摘要

An integrated circuit system that includes: providing a substrate with a PMOS device and an NMOS device; forming an NMOS shallow recess within the substrate; forming a PMOS recess within the substrate; forming a strain inducing layer over the PMOS recess; forming a first dielectric layer over the NMOS device and a second dielectric layer over the PMOS device. Fig 17