| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor memory device leaving no residue, which may cause a short circuit, between adjacent memory cells, and to provide the semiconductor memory device. Ž<P>SOLUTION: A first wiring layer is formed on a semiconductor substrate. A memory cell layer is formed on the first wiring layer. First grooves extending in a first direction are formed in the first wiring layer and the memory cell layer, so that first wires are formed and the memory cell layer is divided by the first grooves. A stacked body is formed by burying a first interlayer film in the first grooves. A second wiring layer is formed above the stacked body. Second grooves extending in a second direction intersecting the first direction and reaching an upper surface of the interlayer film in depth are formed in the stacked body with the second wiring layer formed thereabove, so that second wires are formed. When the interlayer film is removed isotropically from the parts exposed to the second grooves to the inside and the second grooves are dug down to an upper surface of the first wires by anisotropic etching, pillar memory cells divided by the first and second grooves are formed in the intersections of the first and second wires. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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