| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for suppressing the occurrence of crystal defects of the semiconductor device. Ž<P>SOLUTION: A trench for STI is formed on a wafer, and an insulating film is buried in the trench. Then, oxygen is introduced to the surface of the wafer. For introducing oxygen, RTO (Rapid Thermal Oxidation) is performed to the surface of the wafer in an atmosphere of 100% oxygen at 1,100°C for 60 seconds. After that, high-temperature annealing is performed. In an SRAM manufacturing step, the introduction of oxygen is performed before a high-temperature annealing step and an ion implanting step of source/drain sections with the risk of causing dislocation. Thus, the crystal strength of the wafer can be enhanced, and the dislocation caused by the annealing step and the ion implanting step can be suppressed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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