| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce contact resistance, and to suppress the enlargement of a semiconductor apparatus. Ž<P>SOLUTION: An active element has a first electrode 210 (gate electrode) and a second electrode 220 (diffusion layer region). A first metal compound layer 212 (silicide layer) is formed on a surface of the gate electrode 210, and a second metal compound layer 222 (silicide layer) is formed on a surface of the diffusion layer region 220. A first contact 310 is connected to the gate electrode 210, and a second contact 320 is connected to the diffusion layer region 220. The cross-sectional shape of the first contact 310 in a direction parallel to a substrate 200 is rectangular or elliptic, and a lower end of the same intrudes into the first metal compound layer 212 but does not penetrate it. The cross-sectional shape of the second contact 320 in a direction parallel to the substrate 200 is circular. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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