| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for operating a plurality of DMOS transistors distributed and formed on a semiconductor substrate without breakdown and a method for manufacturing the semiconductor device. SOLUTION: The on-off threshold voltage of the innermost DMOS transistor in three or more of the DMOS transistors distributed and formed on the semiconductor substrate is larger than that of the outermost DMOS transistor. COPYRIGHT: (C)2010,JPO&INPIT |
