| 摘要 |
A memory cell of NAND flash memory has a floating gate electrode taking a pillared shape formed on the first element region via a gate insulation film; diffusion layers formed in regions located on both sides of the floating gate electrode in the first element region; an IPD film formed on a top face of the floating gate electrode so as to extend over side faces of the floating gate electrode in a second direction perpendicular to the first direction; and a control gate electrode formed on the floating gate electrode and between adjacent floating gate electrodes via the IPD film so as to be continuous in the second direction. The IPD film is a low-k film.
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