A semiconductor structure, comprising: a substrate (12); a seed layer (16) over an upper surface of the substrate (12); a semiconductor layer (20) disposed over the seed layer (16); a transistor device (22, 24) in the semiconductor layer (20); wherein the substrate (12) has an aperture (42) therein, such aperture (42) extending from a bottom surface of the substrate (12) and terminating on a bottom surface of the seed layer (16); and an opto-electric structure (44) disposed on the bottom surface of the seed layer (16).
