发明名称 REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON USING THE MONOSILANE PROCESS
摘要 The invention relates to a reactor (10) for producing polycrystalline silicon, having a reactor floor (2) having a plurality of nozzles (4) formed therein. A siliceous gas flows in through the nozzles (4). A plurality of filament rods (6) are also mounted on the reactor floor (2). A gas outlet opening (8) for feeding used siliceous gas to an enrichment and/or conditioning is further provided. The gas outlet opening (8) is formed at a free end (21) of an inner tube (20), wherein the inner tube (20) is fed through the reactor floor (2).
申请公布号 CA2749724(A1) 申请公布日期 2010.07.29
申请号 CA20092749724 申请日期 2009.10.09
申请人 SCHMID SILICON TECHNOLOGY GMBH 发明人 STOECKLINGER, ROBERT
分类号 C01B33/035 主分类号 C01B33/035
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