SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of obtaining surely a characteristic to be inherently obtained by adopting SiC as a raw material, and to provide a manufacturing method thereof. SOLUTION: An JFET 1 has a wafer 10 with at least an upper face 14A formed with silicon carbide, and a gate contact electrode 21 formed on the upper face 14A. The wafer 10 includes the first p-type region 16 that is an ion implantation region formed to include the upper face 14A. The first p-type region 16 includes a base region 16A arranged to include the upper face 14A, and a projected region 16B. The width w1in a direction along the upper face 14A is wider than the width w2of the projected region 16B, in the base region 16A. The gate contact electrode 21 is arranged in contact with the first p-type region 16, to overlap the whole thereof with the first p-type region 16 in top view. COPYRIGHT: (C)2010,JPO&INPIT