| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a p-channel MIS (Metal Insulator Semiconductor) transistor having a metal gate and an n-channel MIS transistor having a metal gate by the small number of steps. Ž<P>SOLUTION: A semiconductor device includes a semiconductor substrate having a silicon layer, n-type active region and p-type active region defined in the semiconductor substrate, a first high dielectric constant gate insulating film formed above the n-type active region, having a dielectric constant higher than silicon oxide and containing Al on its surface, a second high dielectric constant insulating film formed above the p-type active region and having a dielectric constant higher than silicon oxide, and first gate electrode and second gate electrode respectively formed on the first and second high dielectric constant gate insulating films and formed by materials containing metals or metal compounds having work functions suited for the n-channel transistor. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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