| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve sensitivity by effectively photoelectrically converting long wavelength band light passing through a photodiode. <P>SOLUTION: A solid-state imaging device includes a photoelectric converting section 21 formed in a semiconductor layer 11, a signal circuit (not shown) formed at the semiconductor layer 11 at a side opposite to an incident side from which light enters the photoelectric converting section, and a reflecting layer 43 formed at a side opposite to a light-incident side of the photoelectric converting section. The signal circuit handles signal charges photoelectrically converted by the photoelectric converting section. The reflecting layer 43 reflects light that has passed through the photoelectric converting section toward the photoelectric converting section side. The reflecting layer is different from a wiring layer 53 formed above a side opposite to the light-incident side of the semiconductor layer 11 and is formed so as to be embedded in a hole 93 formed at an insulating film 81 between the semiconductor layer 11 and the wiring layer 53. <P>COPYRIGHT: (C)2010,JPO&INPIT |
