| 摘要 |
<P>PROBLEM TO BE SOLVED: To internally identify and correct a defective part in the memory device, increase service life thereof and improve manufacturing yield. Ž<P>SOLUTION: The memory device (20) has: a memory block (1) formed by a plurality of standard sectors (15) and a redundancy portion (2); a control circuit (3) which controls programming and erasing of the data of the memory cells; and a correctness verifying circuit (7) for the data stored in the memory cells. The correctness verifying circuit (7) is enabled by the control circuit (3) and generates an incorrect-datum signal in the event of detection of at least one non-functioning cell. The control circuit moreover activates redundancy, enables the redundancy portion (2) and stores redundancy data in a redundancy-memory stage (5b) in the presence of an incorrect datum. Various solutions are presented that implement column, row and sector redundancy, both in case of erasing and programming. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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