| 摘要 |
<p>PURPOSE: A method for forming a pattern of a semiconductor device is provided to form a pattern with a smaller pitch than a photo resist pattern by etching an object layer using an etch auxiliary pattern as a mask. CONSTITUTION: An etch object layer and a photo resist pattern are formed on a semiconductor substrate(102). A first etch auxiliary pattern is formed on the photo resist pattern. A second etch auxiliary layer is formed on the semiconductor substrate including the photo resist pattern and the first etch auxiliary pattern. A second etch auxiliary pattern(114a) is formed on the sidewall of the photo resist pattern by diffusing the hydrogen ion of the photo resist pattern to the second etch auxiliary layer adjacent to the photo resist pattern. The second etch auxiliary layer to which the hydrogen ion is not diffused is removed. The first etch auxiliary pattern is removed. The photo resist pattern is removed. The etch object layer is etched by using the second auxiliary pattern as a mask.</p> |
