发明名称 SEMICONDUCTOR LASER WITH LOW RELATIVE INTENSITY NOISE OF INDIVIDUAL LONGITUDINAL MODES AND OPTICAL TRANSMISSION SYSTEM INCORPORATING THE LASER
摘要 A semiconductor laser comprises an electrically isolated active section and at least one noise reducing section and operates on a ground state transition of a quantum dot array having inhomogeneous broadening greater than 10 nm. The laser preferably emits more than 10 optical modes such that a total relative intensity noise of each optical mode is less than 0.2% in the 0.001 GHz to 10 GHz range. The spectral power density is preferably higher than 2mW/nm. An optical transmission system and a method of operating a quantum dot laser with low relative intensity noise of each optical mode are also disclosed.
申请公布号 WO2010065731(A9) 申请公布日期 2010.07.29
申请号 WO2009US66571 申请日期 2009.12.03
申请人 INNOLUME GMBH;GUBENKO, ALEXEY;KOVSH, ALEXEY;WOJCIK, GREG;LIVSHITS, DANIIL;KRESTNIKOV, IGOR;MIKHRIN, SERGEY 发明人 GUBENKO, ALEXEY;KOVSH, ALEXEY;WOJCIK, GREG;LIVSHITS, DANIIL;KRESTNIKOV, IGOR;MIKHRIN, SERGEY
分类号 H01S5/34 主分类号 H01S5/34
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