Through-Silicon Via Sidewall Isolation Structure

摘要

A system and method for an improved through-silicon via isolation structure is provided. An embodiment comprises a semiconductor device having a substrate with electrical circuitry formed thereon. One or more dielectric layers are formed over the substrate, and an opening is etched into the structure extending from a surface of the one or more dielectric layers through the one or more dielectric layers into the substrate; the opening having sidewalls. A low-K dielectric layer is formed over the sidewalls of the opening. The opening is filled with a conductive material and/or a barrier layer creating a through-silicon via that is isolated from the surrounding substrate by the low-K dielectric layer.