| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a device structure which makes the device inexpensive, reliable, and highly mass-producible, and to provide a manufacturing method thereof. <P>SOLUTION: The semiconductor device 100 includes a substrate 101 whereon a semiconductor element including an imaging region 102 and having the front face and the rear face is formed, an electrode portion 103 formed on the front face, external electrodes 109 formed on the rear face, a conductor layer 108 that is formed in a through-hole penetrating the substrate 101 and electrically connects the electrode portion 103 and the external electrodes 109, and an optical member 105 that is formed above the front face and includes a convex surface having a convex shape convexed in the thickness direction and refracts light by the convex shape. The imaging region 102 receives light passed through the optical member 105 and converts the received light into an electric signal. The electric signal converted by the imaging region 102 is output outside via the electrode portion 103, conductor layer 108, and external electrodes 109. The semiconductor device 100 includes a flat topmost surface. <P>COPYRIGHT: (C)2010,JPO&INPIT |
