| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing cracking of a protection film in a portion for covering an electrode caused by a compression stress onto the protection film from a solder when the solder is solidified. <P>SOLUTION: This trench gate type semiconductor device is constituted to include the protection film 2 formed on an interlayer insulating film 37, an emitter electrode 38 and a gate electrode 39 formed to make respective upper faces flush with one another, and an emitter electrode 3 formed on the protection film 2 and connected to the emitter electrode 38 via a through hole 6 formed in the protection film 2. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
