| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for relatively easily producing a group III metal nitride single crystal with high productivity, wherein the grown group III metal nitride single crystal can be readily separated from a template substrate. SOLUTION: The method for producing the group III metal nitride single crystal comprises steps of: depositing base films 4A, 4B and 5 of the group III metal nitride single crystal on a substrate body 1 having a film-forming surface 2b and a processed recess part 8 so as to cover the film-forming surface 2b and the processed recess part 8; and subsequently growing the group III metal nitride single crystal 6 on the base films through a flux method or a vapor-phase epitaxy method. COPYRIGHT: (C)2010,JPO&INPIT |
