MAGNETIC MEMORY DEVICE

摘要

PURPOSE: A magnetic memory device is provided to improve the interfacial property between a tunnel barrier layer and a first layer by increasing the orientation against the tunnel barrier of a first layer. CONSTITUTION: A first ferromagnetic layer and a second ferromagnetic layer are formed on a substrate(110). A tunnel barrier layer(150) includes the crystallization between the second ferromagnetic layer and the first ferromagnetic layer. At least one layer of the first and second ferromagnetic layer includes a first layer contacting with the tunnel barrier layer and a second layer. The orientation of the first layer is higher than that of the second layer. The first layer includes a material having the same crystalline structure of the material included in the tunnel barrier layer.