| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device including an ohmic electrode having both low contact resistance and an excellent surface state. <P>SOLUTION: The silicon carbide semiconductor device includes: a Schottky metal portion 8 for an N-type epitaxial layer 2 on an SiC single-crystal substrate 1; and the ohmic electrode 5 for a p-type silicon carbide single crystal 4 provided to the N-type epitaxial layer. The ohmic electrode has an alloy layer containing at least titanium, aluminum, and silicon. The ratio of titanium, aluminum and silicon in the alloy layer is 40 to 70 mass% Al, 20 to 50 mass% Ti, and 1 to 15 mass% Si. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
