| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of detecting a defect, in more detail, a dislocation emerged in an element having at least one crystalline germanium based surface layer. Ž<P>SOLUTION: This method includes an annealing step, i.e. a step for annealing the element, under an atmosphere having a base of a mixture of at least an oxidizing gas and a neutral gas, capable of oxidizing selectively the dislocation generated in the crystalline germanium based surface layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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