| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of achieving high-voltage resistance between a collector and an emitter, and to provide a method of manufacturing the same. Ž<P>SOLUTION: In a high-voltage resistance and horizontal insulated gate bipolar transistor, a buffer region 113 arrives at the surface of a buried oxide film 102 from the surface of an SOI (Silicon On Insulator) layer 103, and an interface between the buffer region 113 and a drift region 104 in the vicinity of the bottom surface of the buffer region 113 is formed on a position equivalent to the interface in the vicinity of the surface of the buffer region 113 or on a position on the side of a body area 105. Since the concentration of an electric field generated in the vicinity of the bottom surface of the buffer region 113 is eased by the configuration, voltage resistance between the collector and the emitter can be further increased. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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