发明名称 |
Method To Create SOI Layer For 3D-Stacking Memory Array |
摘要 |
A 3-D stacked semiconductor device is formed by forming a trench is formed through a top surface in a dielectric layer to expose the crystalline silicon layer having a (100) crystal plane, such that the trench walls are parallel to a <100> direction. Epitaxial silicon is grown between the trench walls to a level that is below the top surface of the dielectric layer. Epitaxial silicon is laterally grown using the top portion of the epitaxially grown silicon as a seed to form a laterally grown epitaxial layer having a (100) crystal plane on the dielectric layer.
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申请公布号 |
US2010187660(A1) |
申请公布日期 |
2010.07.29 |
申请号 |
US20090359412 |
申请日期 |
2009.01.26 |
申请人 |
TANG SANH;WELLS DAVID;BLOMILEY ERIC |
发明人 |
TANG SANH;WELLS DAVID;BLOMILEY ERIC |
分类号 |
H01L29/04;H01L21/20 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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