发明名称 SEMI-QUANTITATIVE THICKNESS DETERMINATION
摘要 While a substrate is polished, it is also irradiated with light from a light source. A current spectrum of the light reflected from the surface of the substrate is measured. A selected peak, having a first parameter value, is identified in the current spectrum. A value of a second parameter associated with the first parameter is determined from a lookup table using a processor. Depending on the value of the second parameter, the polishing of the substrate is changed. An initial spectrum of light reflected from the substrate before the polishing of the substrate can be measured and a wavelength corresponding to a selected peak of the initial spectrum can be determined.
申请公布号 WO2010056679(A3) 申请公布日期 2010.07.29
申请号 WO2009US63913 申请日期 2009.11.10
申请人 APPLIED MATERIALS, INC.;BENVEGNU, DOMINIC J.;SWEDEK, BOGUSLAW A.;DAVID, JEFFREY DRUE;LEE, HARRY Q. 发明人 BENVEGNU, DOMINIC J.;SWEDEK, BOGUSLAW A.;DAVID, JEFFREY DRUE;LEE, HARRY Q.
分类号 H01L21/304;H01L21/66 主分类号 H01L21/304
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