Planarization method of intermetal dielectric for semiconductor device,申请号KR20080091369-传众专利搜索

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发明名称	Planarization method of intermetal dielectric for semiconductor device
摘要
申请公布号	KR100972888(B1)	申请公布日期	2010.07.28
申请号	KR20080091369	申请日期	2008.09.18
申请人		发明人
分类号	H01L21/304;H01L21/306	主分类号	H01L21/304
代理机构		代理人
主权项
地址

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