| 摘要 |
<p>A diode has a first contact (34) of a material having a first conductivity type, a second contact (36) of a material having a second conductivity type arranged co-planarly with the first contact, a channel (38) arranged co-planarly between the first and second contacts, a gate (42) arranged adjacent the channel, and a voltage source electrically connected to the gate. A method includes forming a layer of material on a substrate, forming a first region of a first conductivity in the material, forming a second region of a second conductivity in the material, arranged so as to provide a channel region between the first and second regions, depositing a layer of gate dielectric on the layer of material, arranging a gate adjacent the channel region on the gate dielectric, and electrically connecting a voltage source to the gate.</p> |
