| 摘要 |
Raw materials are economized and a film deposition rate is improved while maintaining film evenness and high film quality. A film deposition apparatus for the continuous formation of a multilayered transparent conductive film is provided which comprises a substrate attachment part, a charging part where evacuation is conducted, a multilayer deposition treatment part comprising two or more deposition treatment parts for forming a transparent conductive film on a substrate by the MOCVD method by reacting an organometallic compound (diethylzinc), diborane, and water in a vapor phase, a substrate takeout part, a substrate detachment part, and a setter return part where the substrate setter is returned to the substrate attachment part. Film deposition is successively conducted while moving a substrate sequentially through the parts to form a multilayered transparent conductive film on the substrate. Each deposition treatment part is equipped with nozzles for spraying the organometallic compound, diborane, and water and with a cooling mechanism for cooling the nozzles. |
