NITRIDE SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE SEMICONDUCTOR OPTICAL DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

A well layer of a nitride semiconductor optical device involves strain and extends along a reference plane inclined at an inclination angle α with respect to the plane perpendicular to a reference axis extending along the c-axis. The inclination angle α falls in the range from 59° to 80° and in the range from 150° to 180°. A gallium nitride semiconductor layer (P) having a band gap larger than that of the barrier layer is provided adjacently to a light-emitting layer (SP-) having a negative piezoelectric field. The direction of the piezoelectric field in the well layer is from an n layer to a p layer, and the direction of the piezoelectric field in the gallium nitride semiconductor layer (P) is from the p layer to the n layer. Therefore, a dip not in the conduction band but in the valence band is formed at the interface between the light-emitting layer (SP-) and the gallium nitride semiconductor layer (P).