Method for fabricating interlayer dielectric in semiconductor device,申请号KR20080028629-传众专利搜索

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发明名称	Method for fabricating interlayer dielectric in semiconductor device
摘要
申请公布号	KR100972861(B1)	申请公布日期	2010.07.28
申请号	KR20080028629	申请日期	2008.03.27
申请人		发明人
分类号	H01L27/108;H01L21/31	主分类号	H01L27/108
代理机构		代理人
主权项
地址

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