NONVOLATILE MEMORY DEVICES AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A non-volatile memory device and a method for manufacturing the same are provided to suppress electrical charges in an electrical charge trapping film from being spread toward the vertical direction of a semiconductor substrate by forming the electrical charge trapping film in a curved shape. CONSTITUTION: Three dimensional conductive patterns are arranged on a semiconductor substrate(100). A semiconductor pattern(148) crosses one sidewalls of the conductive patterns. An electrical charge trapping film(144) is interposed between the semiconductor pattern and the one sidewall of the conductive patterns. A seed film pattern is interposed between the electrical charge trapping film and the one sidewall of the conductive patterns. An expanding part is formed between insulating patterns which are vertically adjacent to each other.