发明名称 Fabrication of nitride nanoparticles
摘要 <p>A method of manufacturing a nitride nanoparticle comprises manufacturing the nitride nanostructure from constituents including: a material containing metal, silicon or boron, a material containing nitrogen, and a capping agent having an electron-accepting group for increasing the quantum yield of the nitride nanostructure. Nitride nanoparticles, for example nitride nanocrystals, having a photoluminescence quantum yield of at least 1%, and up to 20% or greater, may be obtained. Preferred are indium nitride nanoparticles prepared from indium iodide and sodium amide, and the capping agent is zinc stearate.</p>
申请公布号 GB2467162(A) 申请公布日期 2010.07.28
申请号 GB20090001226 申请日期 2009.01.26
申请人 SHARP KABUSHIKI KAISHA 发明人 PETER NEIL TAYLOR;JONATHAN HEFFERNAN
分类号 C01B21/06;C01B33/00;C01B35/00;C01G15/00;C09K11/08;C30B29/38;C30B29/40 主分类号 C01B21/06
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