| 摘要 |
A plasma processing chamber configured to generate a plasma is provided. The plasma processing chamber includes a substrate support assembly which includes a substrate support that is capable of supporting a substrate. The plasma processing chamber further includes a plate having a bottom surface and a top surface, and the plate is coupled to the plasma processing chamber. The plate further includes a plurality of countersunk regions for receiving a corresponding plurality of fasteners that enable coupling of the plate to the plasma processing chamber, and the plate has a lip that surrounds an outer region of the plate near the top surface of the plate. The substrate support is configured to be connected to the top surface of the plate. The plasma processing chamber further includes an isolation plate that surrounds the outer region of the plate, and the isolation plate includes a plurality of nipples and each of the plurality of nipples is configured to mate with the plurality of countersunk regions in the plate. The isolation plate is configured to fit in the lip of the plate that surrounds the outer region of the plate.
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