| 摘要 |
Provided are a semiconductor device and a manufacturing method thereof. A pair of adjacent gate structure can be formed on a substrate. Mask patterns exposing a portion located between the gate structures are formed. The substrate portion located between the gate structures can be etched using the mask patterns as an etch mask to form a pocket. First conduction type impurities can be implanted into the pocket to form a first impurity layer in a surface of the pocket. Second conduction type impurities can be implanted into the pocket to form a second impurity layer on the first impurity layer. The pocket can be filled with an insulating material. Accordingly, impurities having a type opposite to the type of source junction impurities are implanted into the pocket to reduce a potential barrier of a source junction. Consequently, punch-through generated between a source and a drain can be inhibited.
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