发明名称 |
Method of fabricating semiconductor device |
摘要 |
A method of fabricating a semiconductor device is provided. The method includes forming at least one etch target film on a substrate, forming a first reflowable etch mask on the at least one etch target film, patterning the etch target film using the first reflowable etch mask. The method further includes reflowing the first reflowable etch mask to form a second etch mask and patterning the etch target film using the second etch mask. |
申请公布号 |
US7763415(B2) |
申请公布日期 |
2010.07.27 |
申请号 |
US20060430414 |
申请日期 |
2006.05.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JEONG-MIN;KIM JANG-SOO;LEE HI-KUK |
分类号 |
G03F7/00;H01L21/00 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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