发明名称 Circuit and method for generating electrical solitons with junction field effect transistors
摘要 A circuit can include an amplifier having at least a first junction field effect transistor (JFET) of a first conductivity type with a source coupled to a first power supply node, and a drain coupled to an amplifier output node. A first variable bias circuit can be coupled between the drain and at least one gate of the first JFET. The first variable bias circuit can alter a direct current (DC) bias to the first JFET according a potential at the amplifier output node. A first bias impedance can be coupled between the drain of the first JFET and a second power supply node. The circuit can also include a non-linear transmission line (NLTL) coupled between the amplifier output and a gate of the first JFET. The NLTL being configured to propagate an electrical soliton.
申请公布号 US7764137(B2) 申请公布日期 2010.07.27
申请号 US20070903296 申请日期 2007.09.21
申请人 SUVOLTA, INC. 发明人 HAMLIN CHRISTOPHER L.
分类号 H03B5/18 主分类号 H03B5/18
代理机构 代理人
主权项
地址