发明名称 |
Semiconductor memory device and method of fabricating the same |
摘要 |
A semiconductor memory device includes a semiconductor substrate. An inter-layer dielectric is disposed on the semiconductor substrate. A bit line is disposed on the inter-layer dielectric. A bit line spacer is fabricated of a nitride layer containing boron and/or carbon and covers sidewalls of the bit line. A method of fabricating the semiconductor memory device is also provided.
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申请公布号 |
US7763542(B2) |
申请公布日期 |
2010.07.27 |
申请号 |
US20060505264 |
申请日期 |
2006.08.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JIN-GYUN;KIM KI-SUN;AHN JAE-YOUNG |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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