发明名称 Semiconductor memory device and method of fabricating the same
摘要 A semiconductor memory device includes a semiconductor substrate. An inter-layer dielectric is disposed on the semiconductor substrate. A bit line is disposed on the inter-layer dielectric. A bit line spacer is fabricated of a nitride layer containing boron and/or carbon and covers sidewalls of the bit line. A method of fabricating the semiconductor memory device is also provided.
申请公布号 US7763542(B2) 申请公布日期 2010.07.27
申请号 US20060505264 申请日期 2006.08.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM JIN-GYUN;KIM KI-SUN;AHN JAE-YOUNG
分类号 H01L21/311 主分类号 H01L21/311
代理机构 代理人
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