SEMICONDUCTOR SANDWICH-STRUCTURE 3C-SiC/Si, METHOD OF ITS PRODUCION AND MEMBRANE-TYPE SENSITIVE ELEMENT INCORPORATING SAID STRUCTURE

摘要

FIELD: physics. ^ SUBSTANCE: proposed structure comprises successively arranged silicon substrate with base orientation (100), layer of nano-porous 50 to 180 nm-thick silicon layer produced by chemical etching of substrate and layer 3C-SiC applied with substitution of hydrogen by carbon in surface bonds of Si-C of porous silicon layer. Proposed invention covers also method of produced above described sandwich structure and membrane-type sensitive element. ^ EFFECT: increased reverse breakage voltage and mobility of charge carriers in semiconductor sandwich structure. ^ 3 cl, 4 dwg, 3 tbl