发明名称 Forming interconnects
摘要 A method for forming an electronic device, comprising: forming a first conductive or semiconductive layer; forming a sequence of at least on insulating layer and at least one semiconducting layer over the first conductive or semiconductive layer; locally depositing solvents at a localized region of the insulating layer so as to dissolve the sequence of insulating and semiconducting layers in the region to leave a void extending through the sequence of layer; and depositing conductive or semiconductive material in the void.
申请公布号 US7763501(B2) 申请公布日期 2010.07.27
申请号 US20060467687 申请日期 2006.08.28
申请人 PLASTIC LOGIC LIMITED 发明人 SIRRINGHAUS HENNING;HENRY FRIEND RICHARD;KAWASE TAKEO
分类号 H01L21/00;H01L21/288;H01L21/311;H01L21/312;H01L21/336;H01L21/768;H01L27/32;H01L29/786;H01L51/00;H01L51/05;H01L51/40;H01L51/52 主分类号 H01L21/00
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