发明名称 Flash memory system and programming method performed therein
摘要 Provided are a flash memory system and a programming method performed in the flash memory system. The flash memory system includes a buffer unit including a plurality of buffers, and temporarily storing data transmitted by a host; a plurality of channel units each including at least one flash memory chip that includes a plurality of memory cell arrays; and a control unit which controls the data stored in the buffer unit to be sequentially transmitted to the channel units and the transmitted data to be recorded to the memory cell arrays of the flash memory chips in the channel units.
申请公布号 US7765359(B2) 申请公布日期 2010.07.27
申请号 US20070730800 申请日期 2007.04.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG SHIN-WOOK;LEE DONG-WOO
分类号 G06F12/00 主分类号 G06F12/00
代理机构 代理人
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