Method of manufacturing semiconductor device

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to prevent a bridge between gate patterns by forming gate electrode material in a damascene. CONSTITUTION: In a method of manufacturing a semiconductor device, a gate insulating layer(102), a first conductive pattern(104a), a dielectric pattern(106a), a second conductive pattern(108a) and a laminate pattern including a hard mask pattern are formed on a semiconductor substrate(100). A spacer layer(124) is formed on the side wall of the laminate pattern, and an interlayer insulating film(128) is formed between spacer layers. A trench(Tc) is formed by removing the hard mask pattern, and a protective pattern(130a) is formed on the side wall of the trench. A metal layer is formed inside the trench.