| 摘要 |
A transistor of an integrated circuit includes a first and second source/drain regions, a channel region connecting the first and second source/drain regions, and a gate electrode configured to control an electrical current flowing in the channel. The gate electrode is disposed in a gate groove, that is defined in a top surface of a semiconductor substrate. The first and second source/drain regions extend at least to a depth d1, wherein the depth d1 is measured from the top surface of the substrate. A top surface of the gate electrode is disposed beneath the top surface of the semiconductor substrate in a distance to the top surface that is less than the depth d1.
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