发明名称 Method of forming a layer on a wafer
摘要 A layer is formed on a semiconductor wafer in an apparatus having a processing chamber, a transferring chamber, and a wafer boat. The boat having the semiconductor wafer thereon is rotated in the transferring chamber. While the boat is rotated, the boat is transferred between the transferring chamber and the processing chamber and a reaction gas is provided to the processing chamber to form the layer on the wafer.
申请公布号 US7763550(B2) 申请公布日期 2010.07.27
申请号 US20050061407 申请日期 2005.02.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YAHNG JI-SANG;PARK YOUNG-WOOK;HAN JAE-JONG;CHANG JUM-SOO
分类号 H01L21/31;C23C16/00;H01L21/00;H01L21/20;H01L21/205;H01L21/316;H01L21/677 主分类号 H01L21/31
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