发明名称 |
Method of manufacturing semiconductor device including forming two stress films and irradiation of one stress film |
摘要 |
A method of manufacturing a semiconductor device, in which a stress film having a large stress can be formed with high accuracy over a transistor. The method comprises the steps of: depositing a tensile stress film over the whole surface of a substrate having formed thereon an n-MOSFET; removing by etching the deposited stress film while leaving it on the n-MOSFET; and performing UV irradiation to the remaining stress film. By the UV irradiation, a tensile stress of the stress film is improved. Further, although the stress film is cured by the UV irradiation, occurrence of etching defects caused by the curing is prevented because the UV irradiation is performed after the etching. Thus, speeding-up and high quality of the n-MOSFET can be attained.
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申请公布号 |
US7763509(B2) |
申请公布日期 |
2010.07.27 |
申请号 |
US20060639344 |
申请日期 |
2006.12.15 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
PIDIN SERGEY;OWADA TAMOTSU |
分类号 |
H01L21/8238;H01L21/302;H01L21/461 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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