发明名称 |
Non-volatile memory device having a nitride-oxide dielectric layer |
摘要 |
A non-volatile memory cell may include a semiconductor substrate; a source region in a portion of the substrate; a drain region within a portion of the substrate; a well region within a portion of the substrate. The memory cell may further include a first carrier tunneling layer over the substrate; a charge storage layer over the first carrier tunneling layer; a second carrier tunneling layer over the charge storage layer; and a conductive control gate over the second carrier tunneling layer. Specifically, the drain region is spaced apart from the source region, and the well region may surround at least a portion of the source and drain regions. In one example, the second carrier tunneling layer provides hole tunneling during an erasing operation and may include at least one dielectric layer.
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申请公布号 |
US7763927(B2) |
申请公布日期 |
2010.07.27 |
申请号 |
US20050300813 |
申请日期 |
2005.12.15 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
WU CHAO-I;HSU TZU-HSUAN;LUE HANG-TING;LAI ERH-KUN |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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