| 摘要 |
The semiconductor memory device blocks a power supply voltage, which is supplied to the sense amplifier, in a write operation, or pull-down drives first and second local I/O lines LIO and LIOB lest they reach the level of ground voltage Vss. Driving time of a write driver of the semiconductor memory device is reduced, and current consumption is reduced. A sense amplifier driving circuit of a semiconductor memory device includes a transfer unit for transferring first and second control signals in response to an enable signal which is activated in a write operation, and a power supply unit for supplying first and second power supply voltages to a sense amplifier in response to the first and second control signals.
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