摘要 |
The present invention discloses several preferred mask-programmable 3-D memory (3D-MPROM) structures, including pillar-shaped 3D-MPROM, natural-junction 3D-MPROM, interleaved 3D-MPROM, and separate 3D-MPROM. The present invention also makes further improvements to its peripheral circuits. The use of sense-amplifier can significantly lower the leakage-current requirement on the 3D-ROM memory cell. Self-timing can improve the 3D-ROM speed and reduce its power consumption.
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