METHOD FOR INFORMATION READOUT IN RESISTIVE RANDOM ACCESS MEMORY

摘要

A method for information readout in resistance random access memory relates to computation engineering and may be used for creation high-effective permanent resistance random access memory. The method consists in following: for information write and readout to memristors-resistance random access memory electric current pulses from a current source are supplied. Saved information in memristors-resistance memory is determined according voltage on the said memory, for information redout two current pulses are fed from current sources of different polarity, area of current pulses of each polarity is chosen less than write currents. The invention provides increasing number of readout cycles without information rewrite, energy consumption decreasing and extension of temperature range of resistance random access memory operation.