CMP SLURRY

摘要

PURPOSE: Chemical mechanical polishing slurry is provided to obtain an excellent polishing rate, to minimize scratches to a polished surface, and to effectively improve reliability and productivity when the chemical mechanical polishing slurry is applied to a manufacturing process of an ultra-dense semiconductor requiring a micro-pattern. CONSTITUTION: A method for chemical mechanical polishing slurry comprises the following steps: manufacturing a ceria dispersion solution by mixing ceria having particle size distribution of 0.01-1 mm, first polyacrylic acid having an average molecular weight of 2,000~8,000, and water; and mixing the ceria dispersion solution and second polyacrylic acid having an average molecular weight of 5,000~10,000. The chemical mechanical polishing slurry includes ceria powder having bimodal particle size distribution.