| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element wherein contact resistance generated between an n-contact layer and an n-side electrode is effectively reduced while maintaining external quantum efficiency, and to provide a method for efficiently manufacturing the nitride semiconductor light-emitting element as above. <P>SOLUTION: The nitride semiconductor light-emitting element includes a semiconductor laminate containing an n-type laminate, a light-emitting layer and a p-type laminate, an n-side electrode, and a p-side electrode. In the nitride semiconductor light-emitting element, the n-type laminate has the n-contact layer comprising an Al<SB>x</SB>Ga<SB>1-x</SB>N material (wherein 0.7≤x≤1.0) and an n-cladding layer provided on the n-contact layer, and an intermediate layer comprising an Al<SB>y</SB>Ga<SB>1-y</SB>N material (wherein 0≤y≤0.5) is provided on the n-contact layer, a part of which is exposed to the light-emitting layer side. <P>COPYRIGHT: (C)2010,JPO&INPIT |
